www.kersemi.com 1 7/6/00 IRFR3706 irfu3706 smps mosfet hexfet ? power mosfet v dss r ds(on) max i d 20v 9.0m w 75a ? d-pak i-pak IRFR3706 irfu3706 absolute maximum ratings symbol parameter max. units v ds drain-source voltage 20 v v gs gate-to-source voltage 12 v i d @ t c = 25c continuous drain current, v gs @ 10v 75 ? i d @ t c = 100c continuous drain current, v gs @ 10v 53 ? a i dm pulsed drain current ? 280 p d @t c = 25c maximum power dissipation ? 88 w p d @t c = 100c maximum power dissipation ? 44 w linear derating factor 0. 59 mw/c t j , t stg junction and storage temperature range -55 to + 175 c parameter typ. max. units r q jc junction-to-case CCC 1.7 r q ja junction-to-ambient (pcb mount)* CCC 50 c/w r q ja junction-to-ambient CCC 110 thermal resistance applications benefits l ultra-low gate impedance l very low rds(on) at 4.5v v gs l fully characterized avalanche voltage and current l high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use l high frequency buck converters for computer processor power pd - 93936a
irfr/u3706 2 www.kersemi.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. CCC 0.88 1.3 v t j = 25c, i s = 36a, v gs = 0v ? CCC 0.82 CCC t j = 125c, i s = 36a, v gs = 0v ? t rr reverse recovery time CCC 45 68 ns t j = 25c, i f = 36a, v r =20v q rr reverse recovery charge CCC 65 98 nc di/dt = 100a/s ? t rr reverse recovery time CCC 49 74 ns t j = 125c, i f = 36a, v r =20v q rr reverse recovery charge CCC 78 120 nc di/dt = 100a/s ? parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.021 CCC v/c reference to 25c, i d = 1ma CCC 6.9 9.0 v gs = 10v, i d = 36a ? CCC 8.1 11 m w v gs = 4.5v, i d = 28a ? CCC 11.5 23 v gs = 2.8v, i d = 18a ? v gs(th) gate threshold voltage 0.6 CCC 2.0 v v ds = v gs , i d = 250a CCC CCC 20 a v ds = 16v, v gs = 0v CCC CCC 100 v ds = 16v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 200 v gs = 12v gate-to-source reverse leakage CCC CCC -200 na v gs = -12v dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ? CCC 220 mj i ar avalanche current ? CCC 28 a avalanche characteristics s d g diode characteristics 75 ? 280 a symbol parameter min. typ. max. units conditions g fs forward transconductance 53 CCC CCC s v ds = 16v, i d = 57a q g total gate charge CCC 23 35 i d = 28a q gs gate-to-source charge CCC 8.0 12 nc v ds = 10v q gd gate-to-drain ("miller") charge CCC 5.5 8.3 v gs = 4.5v ? q oss output gate charge CCC 16 24 v gs = 0v, v ds = 10v t d(on) turn-on delay time CCC 6.8 CCC v dd = 10v t r rise time CCC 87 CCC i d = 28a t d(off) turn-off delay time CCC 17 CCC r g = 1.8 w t f fall time CCC 4.8 CCC v gs = 4.5v ? c iss input capacitance CCC 2410 CCC v gs = 0v c oss output capacitance CCC 1070 CCC v ds = 10v c rss reverse transfer capacitance CCC 140 CCC pf ? = 1.0mhz v sd diode forward voltage static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance
irfr/u3706 www.kersemi.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v 2.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.5v 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v 2.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 2.5v 10 100 1000 2.5 3.5 4.5 5.5 6.5 v = 15v 20s pulse width ds v , gate-to-source volta g e (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 71a
irfr/u3706 4 www.kersemi.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 10 20 30 40 50 0 2 4 6 8 10 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs i = d 28a v = 10v ds v = 16v ds
irfr/u3706 www.kersemi.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 4.5v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 20 40 60 80 t , case temperature ( c) i , drain current (a) c d limited by package
irfr/u3706 6 www.kersemi.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 4.5 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 12a 24a 28a
irfr/u3706 www.kersemi.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irfr/u3706 8 www.kersemi.com d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) d-pak (to-252aa) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 d imension ing & tolerancin g per ansi y 14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e t o -252 a a . 4 dimensions show n are before solder dip, sold er d ip max. +0.16 (.006).
irfr/u3706 www.kersemi.com 9 i-pak (to-251aa) package outline dimensions are shown in millimeters (inches) i-pak (to-251aa) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010 ) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r ms to je d e c o u t lin e to -25 2a a . 4 d im e n s io n s s h o w n a r e b e f o r e s o l d e r d ip , solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018)
irfr/u3706 10 www.kersemi.com ? repetitive rating; pulse width limited by max. junction temperature. notes: ? starting t j = 25c, l = 0.54mh r g = 25 w , i as = 28a. ? pulse width 400s; duty cycle 2%. ? calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 m m 13 inch d-pak (to-252aa) tape & reel information dimensions are shown in millimeters (inches)
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